Electroluminescent device

US7208768B2 · kind B2 · utility

Assignee

• Sharp Laboratories of America, Inc. · US

Inventors

• Yoshi Ono · Camas, US
• Wei Gao · Yueqing, CN
• John F. Conley, Jr. · Camas, US
• Osamu Nishio · Charlotte, US
• Keizo Sakiyama · Kashihara, JP

Key dates

• Filing date: Apr 30, 2004
• Grant date: Apr 24, 2007
• Expiry date: Nov 11, 2024

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/95

Abstract

A method is provided for forming an electroluminescent device. The method comprises: providing a type IV semiconductor material substrate; forming a p+/n+ junction in the substrate, typically a plurality of interleaved p+/n+ junctions are formed; and, forming an electroluminescent layer overlying the p+/n+ junction(s) in the substrate. The type IV semiconductor material substrate can be Si, C, Ge, SiGe, or SiC. For example, the substrate can be Si on insulator (SOI), bulk Si, Si on glass, or Si on plastic. The electroluminescent layer can be a material such as nanocrystalline Si, nanocrystalline Ge, fluorescent polymers, or type II–VI materials such as ZnO, ZnS, ZnSe, CdSe, and CdS. In some aspect, the method further comprises forming an insulator film interposed between the substrate and the electroluminescent layer. In another aspect, the method comprises forming a conductive electrode overlying the electroluminescent layer.