Reduction of the contact resistance in organic field-effect transistors with palladium contacts by using phosphines and metal-containing phosphines

US7208782B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hagen Klauk · Erlangen, DE
• Günter Schmid · Hemhofen, DE
• Ute Zschieschang · Stuttgart, DE
• Marcus Halik · Erlangen, DE
• Efstratios Terzoglu · Erlangen, DE

Key dates

• Filing date: Jan 31, 2005
• Grant date: Apr 24, 2007
• Expiry date: Feb 2, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K85/615

Abstract

A semiconductor device includes a semiconductor path, the semiconductor path including an organic semiconductor material, a first contact to inject charge carriers into the semiconductor path, a second contact to extract charge carriers from the semiconductor path, and a layer including phosphine arranged between the first contact and the semiconductor path and/or between the second contact and the semiconductor path. The phosphine in the layer acts as a charge transfer molecule which makes it easier to transfer charge carriers between contact and organic semiconductor material. As a result, the contact resistance between contact and organic semiconductor material can be reduced considerably.