Heat treatment jig for silicon semiconductor substrate
US7210925B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 24, 2005 |
| Grant date | May 1, 2007 |
| Priority date | — |
| Expiry date | Feb 16, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67323
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heat treatment jig for supporting silicon semiconductor substrates by contacting, being loaded onto a heat treatment boat in a vertical heat treatment furnace, comprises; the configuration of a ring or a disc structure with the wall thickness between 1.5 and 6.0 mm; the deflection displacement of 100 μm or less at contact region in loaded condition; the outer diameter which is 65% or more of the diameter of said substrate; and the surface roughness (Ra) of between 1.0 and 100 μm at the contact region. The use of said jig enables to effectively retard the slip generation and to avoid the growth hindrance of thermally oxidized film at the back surface of said substrate, diminishing the surface steps causing the defocus in photolithography step in device fabrication process, thereby enabling to maintain high quality of silicon semiconductor substrates and to substantially enhance the device yield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.