Powder metallurgy crucible for aluminum nitride crystal growth
US7211146B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2004 |
| Grant date | May 1, 2007 |
| Priority date | — |
| Expiry date | Apr 1, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1084
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A crucible for growing III-nitride (e.g., aluminum nitride) single crystals is provided. The crucible includes an elongated wall structure defining an interior crystal growth cavity. Embodiments include a plurality of grains and a wall thickness of at least about 1.5 times the average grain size. In particular embodiments, the crucible includes first and second layers of grains the first layer including grains forming an inside surface thereof and the second layer being superposed with the first layer. The crucible may be fabricated from tungsten-rhenium (W—Re) alloys; rhenium (Re); tantalum monocarbide (TaC); tantalum nitride (Ta2N); hafnium nitride (HfN); a mixture of tungsten and tantalum (W—Ta); tungsten (W); and combinations thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.