Diagonal deep well region for routing body-bias voltage for MOSFETS in surface well regions
US7211478B1 · kind B1 · utility
19Cited by
12References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2005 |
| Grant date | May 1, 2007 |
| Priority date | — |
| Expiry date | Aug 8, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Diagonal deep well region for routing the body-bias voltage for MOSFETS in surface well regions is provided and described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.