Method of manufacturing flash memory device
US7211484B2 · kind B2 · utility
7Cited by
9References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2003 |
| Grant date | May 1, 2007 |
| Priority date | — |
| Expiry date | Dec 23, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/49
Abstract
Disclosed is a method of manufacturing a flash memory device. In a flash memory device using a SA-STI scheme, a trench for isolation is buried with oxide. A field oxide film is then formed by means of a polishing process. Next, field oxide films of a cell region and a low-voltage transistor region are selectively etched by a given thickness. As EFH values of the cell region, the low-voltage transistor region and the high-voltage transistor region become same or similar, it is possible to secure stability of a subsequent process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.