Method and apparatus for laser annealing
US7211501B2 · kind B2 · utility
23Cited by
11References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2002 |
| Grant date | May 1, 2007 |
| Priority date | — |
| Expiry date | Dec 12, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1068
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Numerous embodiments of a method and apparatus for laser annealing are disclosed. In one embodiment, a method of laser annealing includes performing one or more annealing processes on one or more portions of a semiconductor device, where one or more annealing processes performed on one or more portions of the semiconductor device are varied based at least in part on the particular portion of the semiconductor device being annealed, and/or on one or more desirable characteristics of the particular portion of the semiconductor device being annealed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.