Method for manufacturing semiconductor device
US7211502B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2004 |
| Grant date | May 1, 2007 |
| Priority date | — |
| Expiry date | May 13, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device in which lower cost can be realized, a wiring with favorable coverage can be formed in a contact hole having a large aspect ratio, wiring capacitance can be reduced and a multilayer wiring can be formed, can be provided. In order to obtain the semiconductor device, the following steps are required; forming a first conductive film which serves as a barrier so as to be in contact with an organic insulating film with an opening portion formed; forming a second conductive film including aluminum so as to be in contact with the first conductive film; or forming a nitride film so as to be in contact with the organic insulating film with the opening portion formed; patterning the nitride film; forming a first conductive film which serves as a barrier so as to be in contact with the nitride film; forming a second conductive film including aluminum so as to be in contact with first conductive film; and thereafter selectively performing a heat treatment under reduced pressure or in normal pressure, and flattening the second conductive film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.