Method for fabricating a field effect transistor

US7211520B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ute Zschieschang · Stuttgart, DE
• Hagen Klauk · Erlangen, DE
• Marcus Halik · Erlangen, DE
• Guenter Schmid · Hemhofen, DE
• Stefan Braun · Blankenloch, DE

Key dates

• Filing date: Feb 25, 2005
• Grant date: May 1, 2007
• Expiry date: Jun 30, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K10/462
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method for fabricating a field effect transistor, in which, after the etching of the gate electrode, the removal of the etching mask is omitted since the etching mask serves as a gate dielectric. The etching mask or the dielectric has a self-assembled monolayer of an organic compound.