Devices with optical gain in silicon
US7211821B2 · kind B2 · utility
11Cited by
34References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2004 |
| Grant date | May 1, 2007 |
| Priority date | — |
| Expiry date | Oct 16, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/173
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.