Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage

US7211844B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Toshiharu Furukawa · South Burlington, US
• Mark C. Hakey · Saint Albans, US
• Steven J. Holmes · Colchester, US
• David V. Horak · South Burlington, US
• Peter H. Mitchell · Jericho, US
• Larry Nesbit · Farmington, US

Key dates

• Filing date: Jan 29, 2004
• Grant date: May 1, 2007
• Expiry date: Apr 25, 2024

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/724
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Vertical field effect transistors having a channel region defined by at least one semiconducting nanotube and methods for fabricating such vertical field effect transistors by chemical vapor deposition using a spacer-defined channel. Each nanotube is grown by chemical vapor deposition catalyzed by a catalyst pad positioned at the base of a high-aspect-ratio passage defined between a spacer and a gate electrode. Each nanotube grows in the passage with a vertical orientation constrained by the confining presence of the spacer. A gap may be provided in the base of the spacer remote from the mouth of the passage. Reactants flowing through the gap to the catalyst pad participate in nanotube growth.