Patent · US Expired

Resistive memory for low-voltage applications

US7211856B2 · kind B2 · utility

2Cited by

1References

23Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Recai Sezi · Simmerath, DE
Andreas Walter · Egloffstein, DE
Reimund Engl · Munich, DE
Anna Maltenberger · Leutenbach, DE
Joerg Schumann · Dresden, DE
Thomas Weitz · Bad Dürkheim, DE

Key dates

Filing date	Jan 24, 2005
Grant date	May 1, 2007
Priority date	—
Expiry date	Jul 7, 2025

Classification

Technology area (CPC H)Electricity
CPC primaryH10K19/202
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Memory cells having two electrodes and a layer arranged in between and including an active material which contains hexakisbenzylthiobenzene, dichlorodicyano-p-benzoquinone and optionally a polymer are provided. Furthermore, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.