Integrating thermoelectric elements into wafer for heat extraction
US7211890B2 · kind B2 · utility
5Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2003 |
| Grant date | May 1, 2007 |
| Priority date | — |
| Expiry date | Jan 21, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment of the present invention is a technique to provide heat extraction for semiconductor devices. At least a thermoelectric film is fabricated onto a bare wafer. The backside of the bare wafer is bonded to an active wafer having at least a device. The bonded bare and active wafers are annealed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.