FeRAM having differential data
US7212450B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2004 |
| Grant date | May 1, 2007 |
| Priority date | — |
| Expiry date | Jun 30, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/4013
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a non-volatile ferroelectric memory device having differential data, the device including: a plurality of cell array block groups having a hierarchy bit line structure and storing differential data; a common data bus being shared by a plurality of the cell array block groups, and transferring sensing voltages induced by the differential data; a column selection control unit selectively applying to the common data bus the induced sensing voltages of two main bit lines of the cell array block group according to the differential data; and a sense amp unit receiving the sensing voltages through the common data bus, comparing two sensing voltages induced by the differential data, and sensing the cell data. Therefore, the non-volatile ferroelectric memory device of the invention is capable of sensing a cell data more stably, independent of external factors and the state of a cell, by simultaneously sensing the stored data (differential data) in two unit cells and detecting the cell data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.