Method of fabricating ohmic contact on n-type gallium nitride (GaN) of room temperature by plasma surface treatment
US7214325B2 · kind B2 · utility
15Cited by
7References
19Claims
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Key dates
| Filing date | Mar 22, 2002 |
| Grant date | May 8, 2007 |
| Priority date | — |
| Expiry date | Mar 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28575
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Forming low contract resistance metal contacts on GaN films by treating a GaN surface using a chlorine gas Inductively Coupled Plasma (ICP) etch process before the metal contacts are formed. Beneficially, the GaN is n-type and doped with Si, while the metal contacts include alternating layers of Ti and Al. Additionally, the GaN film is dipped in a solution of HCl:H2O prior to metal contact formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.