Method for fabricating a semiconductor memory cell

US7214587B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Cay-Uwe Pinnow · Birkenfeld, DE
• Ralf Symanczyk · Bad Aibling, DE

Key dates

• Filing date: Mar 9, 2005
• Grant date: May 8, 2007
• Expiry date: Jul 30, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8825

Abstract

Semiconductor memory cell and also a corresponding fabrication method are described, in which a first or bottom electrode device of the memory element of the semiconductor memory cell according to the invention and the gate electrode device of the underlying field effect transistor as selection transistor of the semiconductor memory cell are formed as the same material region or with a common material region.