Passivation for improved bipolar yield
US7214593B2 · kind B2 · utility
2Cited by
31References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2001 |
| Grant date | May 8, 2007 |
| Priority date | — |
| Expiry date | Nov 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/891
Abstract
A SiGe heterojunction bipolar transistor including at least an emitter formed on a SiGe base region wherein the sidewalls of the emitter are protected by a conformal passivation layer. The conformal passivation layer is formed on the exposed sidewalls of said emitter prior to siliciding the structure. The presence of the passivation layer in the structure prevents silicide shorts from occurring by eliminating bridging between adjacent silicide regions; therefore improved SiGe bipolar yield is obtained. A method for forming such a structure is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.