Inventor · Jericho, VT, US

Peter B. Gray

26Patents
6h-index
36Co-inventors
65Inventor score

Filing activity: May 17, 1999 → Mar 25, 2016

Most-cited inventions

PatentTitleAreaCited byStatus
US7709338B2 BiCMOS devices with a self-aligned emitter and methods of fabricating such BiCMOS devices Electricity 13 Active
US6121122A Method of contacting a silicide-based schottky diode Electricity 13 Expired
US8536012B2 Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases Electricity 11 Active
US7972919B2 Vertical PNP transistor and method of making same Emerging Cross-Sectional Technologies 8 Active
US6597050B1 Method of contacting a silicide-based schottky diode and diode so formed Electricity 8 Expired
US7002190B1 Method of collector formation in BiCMOS technology Electricity 7 Expired
US6448124B1 Method for epitaxial bipolar BiCMOS Electricity 6 Expired
US8482101B2 Bipolar transistor structure and method including emitter-base interface impurity Electricity 6 Active
US7217628B2 High performance integrated vertical transistors and method of making the same Electricity 6 Expired
US10367083B2 Compact device structures for a bipolar junction transistor Electricity 5 Active
US8405186B2 Transistor structure with a sidewall-defined intrinsic base to extrinsic base link-up region and method of forming the structure Electricity 5 Active
US8710500B2 Bipolar junction transistor with a self-aligned emitter and base Electricity 5 Active
US8810005B1 Bipolar device having a monocrystalline semiconductor intrinsic base to extrinsic base link-up region Electricity 4 Active
US6670255B2 Method of fabricating lateral diodes and bipolar transistors Electricity 4 Expired
US6909164B2 High performance vertical PNP transistor and method Emerging Cross-Sectional Technologies 3 Expired
US8716837B2 Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases Electricity 3 Active
US7214593B2 Passivation for improved bipolar yield Electricity 2 Expired
US8921195B2 Isolation scheme for bipolar transistors in BiCMOS technology Electricity 2 Active
US9059196B2 Bipolar junction transistors with self-aligned terminals Electricity 2 Active
US8389372B2 Heterojunction bipolar transistors with reduced base resistance Electricity 1 Active
US9231087B2 Bipolar junction transistors with self-aligned terminals Electricity 1 Active
US7491985B2 Method of collector formation in BiCMOS technology Electricity 1 Expired
US8513706B2 Heterojunction bipolar transistors with reduced base resistance Electricity 0 Active
US8492237B2 Methods of fabricating a bipolar junction transistor with a self-aligned emitter and base Electricity 0 Active
US7265010B2 High performance vertical PNP transistor method Emerging Cross-Sectional Technologies 0 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.