Process for producing aluminum-filled contact holes

US7214610B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Jens Hahn · Dresden, DE
• Sven Schmidbauer · Dresden, DE

Key dates

• Filing date: Jan 30, 2004
• Grant date: May 8, 2007
• Expiry date: Sep 30, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76877
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A process for producing aluminum-filled contact holes in a wafer is disclosed. The process uses a coating installation that includes a plurality of vacuum-processing chambers that are coupled to one another via at least one transfer chamber with an associated handler for transferring the wafers. The preferred process including forming the contact holes and depositing a barrier layer. The wafer is cooled to ambient temperature. A cold aluminum PVD coating process can then be carried out in a PVD-aluminum ESC chamber. After the wafer is heated (e.g., to a temperature of less than about 450° C.), a hot aluminum PVD deposition process is carried out in the PVD-aluminum ESC chamber.