Equipment and method for manufacturing silicon carbide single crystal
US7217323B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2004 |
| Grant date | May 15, 2007 |
| Priority date | — |
| Expiry date | Mar 9, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing a silicon carbide single crystal includes the steps of: setting a substrate as a seed crystal in a reactive chamber; introducing a raw material gas into the reactive chamber; growing a silicon carbide single crystal from the substrate; heating the gas at an upstream side from the substrate in a gas flow path; keeping a temperature of the substrate at a predetermined temperature lower than the gas so that the single crystal is grown from the substrate; heating a part of the gas, which is a non-reacted raw material gas and does not contribute to crystal growth, after passing through the substrate; and absorbing a non-reacted raw material gas component in the non-reacted raw material gas with an absorber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.