High performance integrated vertical transistors and method of making the same

US7217628B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• David C. Sheridan · Williston, US
• Peter B. Gray · Jericho, US
• Jeffrey B. Johnson · Hague, US
• Qizhi Liu · South Burlington, US

Key dates

• Filing date: Jan 17, 2005
• Grant date: May 15, 2007
• Expiry date: Jan 17, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/673

Abstract

A complementary bipolar transistor is fabricated using an available portion of a silicon germanium (SiGe) low temperature epitaxial layer as the raised base region for a vertical NPN transistor, and another portion of the same SiGe LTE layer as a vertical PNP collector layer. The complementary pair of transistors is vertically aligned and operates in a single direction.