Electroplated CoWP composite structures as copper barrier layers

US7217655B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Cyril Cabral, Jr. · Ossining, US
• Stefanie Chiras · Peekskill, US
• Emanuel I. Cooper · Scarsdale, US
• Hariklia Deligianni · Alpine, US
• Andrew J. Kellock · Sunnyvale, US
• Judith M. Rubino · Ossining, US
• Roger Y. Tsai · Yorktown, US

Key dates

• Filing date: Feb 2, 2005
• Grant date: May 15, 2007
• Expiry date: Feb 2, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/05007
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A composite material comprising a layer containing copper, and an electrodeposited CoWP film on the copper layer. The CoWP film contains from 11 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a method of making an interconnect structure comprising: providing a trench or via within a dielectric material, and a conducting metal containing copper within the trench or the via; and forming a CoWP film by electrodeposition on the copper layer. The CoWP film contains from 10 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a interconnect structure comprising a dielectric layer in contact with a metal layer; an electrodeposited CoWP film on the metal layer, and a copper layer on the CoWP film.