Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory cell and structures obtained thereby
US7217945B2 · kind B2 · utility
8Cited by
23References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2005 |
| Grant date | May 15, 2007 |
| Priority date | — |
| Expiry date | Mar 23, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/52
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a process of forming a phase-change memory. A lower electrode is disposed in a first dielectric film. The lower electrode comprises an upper section and a lower section. The upper section extends beyond the first dielectric film. Resistivity in the upper section is higher than in the lower section. A second dielectric film is disposed over the first dielectric film and has an upper surface that is coplanar with the upper section at an upper surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.