Semiconductor light source and method of making
US7217947B2 · kind B2 · utility
7Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2004 |
| Grant date | May 15, 2007 |
| Priority date | — |
| Expiry date | Apr 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
Abstract
A solid state light emitting device having a plurality of semiconductor finger members with side walls perpendicular to a substrate. Multiple quantum wells are formed on the side walls, and are also perpendicular to the substrate. Each multiple quantum well is sandwiched between the side wall of a finger member and a second semiconductor member of a conductivity type opposite to that of the finger member. Ohmic contacts are applied to the finger members and second semiconductor member for receiving a voltage. The device is GaN based such that emitted light will be in the UV region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.