Method and apparatus for forming silicon oxide film
US7220461B2 · kind B2 · utility
47Cited by
7References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2004 |
| Grant date | May 22, 2007 |
| Priority date | — |
| Expiry date | Oct 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a silicon oxide film includes disposing a silicon oxide film on a surface of a target substrate, and performing a reformation process on the silicon oxide film. The reformation process is performed by annealing the silicon oxide film while exposing the silicon oxide film to oxygen radicals and hydroxyl group radicals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.