Semiconductor device and manufacturing method thereof, and gate electrode and manufacturing method thereof
US7220628B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2004 |
| Grant date | May 22, 2007 |
| Priority date | — |
| Expiry date | Nov 7, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes a step of forming a layer where a gate electrode aperture is to be formed including at least one ultraviolet resist layer on the surface where a gate electrode is to be formed, and forming a gate electrode aperture in the layer where a gate electrode aperture is to be formed; a step of forming a layer where an over-gate is to be formed in which an over-gate part of a gate electrode is to be formed, on the layer where a gate electrode aperture is to be formed; a step of reducing the width of the gate electrode aperture; and a step of forming the gate electrode in the gate electrode aperture. The method makes it possible to efficiently produce a fine gate electrode by thickening the gate electrode aperture and reducing the width of the gate electrode aperture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.