Method for selectively forming strained etch stop layers to improve FET charge carrier mobility
US7220630B2 · kind B2 · utility
22Cited by
1References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 2004 |
| Grant date | May 22, 2007 |
| Priority date | — |
| Expiry date | Sep 10, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A strained channel MOSFET device with improved charge carrier mobility and method for forming the same, the method including providing a first and second FET device having a respective first polarity and second polarity opposite the first polarity on a substrate; forming a strained layer having a stress selected from the group consisting of compressive and tensile on the first and second FET devices; and, removing a thickness portion of the strained layer over one of the first and second FET devices to improve charge carrier mobility.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.