Method of patterning a porous dielectric material
US7220668B2 · kind B2 · utility
6Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2005 |
| Grant date | May 22, 2007 |
| Priority date | — |
| Expiry date | Aug 6, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76844
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of patterning a porous dielectric material that includes an ash process to treat the porous dielectric material. The treated porous dielectric material allows for the formation of a substantially continuous barrier layer, which can inhibit diffusion of, for example, a conductive material into to the dielectric material. Other embodiments are described and claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.