Self-aligned small contact phase-change memory method and device
US7220983B2 · kind B2 · utility
206Cited by
100References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 9, 2004 |
| Grant date | May 22, 2007 |
| Priority date | — |
| Expiry date | Feb 16, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
The invention relates to a novel memory cell structure and process to fabricate chalcogenide phase change memory. More particularly, it produces a small cross-sectional area of a chalcogenide-electrode contact part of the phase change memory, which affects the current/power requirement of the chalcogenide memory. Particular aspects of the present invention are described in the claims, specification and drawings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.