Method and structure for high performance phase change memory
US7221579B2 · kind B2 · utility
37Cited by
6References
20Claims
0Family size
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Key dates
| Filing date | Jun 13, 2005 |
| Grant date | May 22, 2007 |
| Priority date | — |
| Expiry date | Jul 6, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method (and structure) for a memory cell having a phase change material (PCM) element and a heating element external to the PCM element. The heating element causes one of a presence of and an absence of a phase boundary within the PCM element for storing information in the PCM element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.