Lithographic antireflective hardmask compositions and uses thereof
US7223517B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2003 |
| Grant date | May 29, 2007 |
| Priority date | — |
| Expiry date | Feb 28, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0757
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Compositions and techniques for the processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask composition is provided. The composition comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO1.5}n, wherein n equals 8; and at least one chromophore moiety and transparent moiety. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO1.5}n, wherein n equals 8; and at least one chromophore moiety and transparent moiety.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.