Method of forming a dual damascene metal trace with reduced RF impedance resulting from the skin effect

US7223680B1 · kind B1 · utility

Assignee

• NATIONAL SEMICONDUCTOR CORPORATION · US

Inventors

• Peter J. Hopper · San Jose, US
• Peter Johnson · Sunnyvale, US
• Kyuwoon Hwang · Palo Alto, US
• Michael Mian · Livermore, US
• Robert Drury · Santa Clara, US

Key dates

• Filing date: Dec 3, 2003
• Grant date: May 29, 2007
• Expiry date: Dec 3, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3011
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The RF impedance of a metal trace at gigahertz frequencies is reduced by forming the metal trace to have a base region and a number of fingers that extend away from the base region. When formed to have a number of loops, the metal trace forms an inductor with an increased Q.