Heterojunction bipolar transistor structure
US7224005B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Sep 3, 2004 |
| Grant date | May 29, 2007 |
| Priority date | — |
| Expiry date | Feb 18, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A material made by arranging layers of gallium-arsenide-antimonide (GaAsxSb1-x, 0.0≦x≦1.0) and/or indium-gallium-arsenic-nitride (InyGa1-yAszN1-z, 0.0≦y, z≦1.0) in a specific order is used to form the transistor base of a heterojunction bipolar transistor. By controlling the compositions of the materials indium-gallium-arsenic-nitride and gallium-arsenide-antimonide, and by changing the thickness and order of the layers, the new material would possess a specific energy gap, which in turn determines the base-emitter turn-on voltage of the heterojunction bipolar transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.