Structure and method for manufacturing strained FINFET
US7224033B2 · kind B2 · utility
94Cited by
77References
9Claims
0Family size
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Key dates
| Filing date | Feb 15, 2005 |
| Grant date | May 29, 2007 |
| Priority date | — |
| Expiry date | Mar 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6213
Abstract
A part of the gate of a FINFET is replaced with a stress material to apply stress to the channel of the FINFET to enhance electron and hole mobility and improve performance. The FINFET has a SiGe/Si stacked gate, and before silicidation the SiGe part of the gate is selectively etched to form a gate gap that makes the gate thin enough to be fully silicidated. After silicidation, the gate-gap is filled with a stress nitride film to create stress in the channel and enhance the performance of the FINFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.