Inventor · Brewster, NY, US

Bruce B. Doris

767Patents
32h-index
277Co-inventors
93Inventor score

Filing activity: Dec 27, 1993 → Aug 22, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US8969934B1 Gate-all-around nanowire MOSFET and method of formation Electricity 308 Active
US7459752B2 Ultra thin body fully-depleted SOI MOSFETs Electricity 274 Active
US6977194B2 Structure and method to improve channel mobility by gate electrode stress modification Electricity 180 Expired
US7250658B2 Hybrid planar and FinFET CMOS devices Electricity 156 Expired
US6717216B1 SOI based field effect transistor having a compressive film in undercut area under the channel and a method of making the device Electricity 148 Expired
US6825529B2 Stress inducing spacers Electricity 148 Expired
US9362355B1 Nanosheet MOSFET with full-height air-gap spacer Electricity 145 Active
US7348629B2 Metal gated ultra short MOSFET devices Electricity 120 Expired
US7678638B2 Metal gated ultra short MOSFET devices Electricity 119 Active
US7494861B2 Method for metal gated ultra short MOSFET devices Electricity 119 Active
US6974981B2 Isolation structures for imposing stress patterns Electricity 105 Expired
US7993999B2 High-K/metal gate CMOS finFET with improved pFET threshold voltage Electricity 100 Active
US6790733B1 Preserving TEOS hard mask using COR for raised source-drain including removable/disposable spacer Emerging Cross-Sectional Technologies 97 Expired
US7224033B2 Structure and method for manufacturing strained FINFET Electricity 94 Expired
US7015082B2 High mobility CMOS circuits Electricity 88 Expired
US7329923B2 High-performance CMOS devices on hybrid crystal oriented substrates Electricity 85 Expired
US7247912B2 Structures and methods for making strained MOSFETs Electricity 73 Expired
US7291886B2 Hybrid substrate technology for high-mobility planar and multiple-gate MOSFETs Electricity 65 Expired
US6911383B2 Hybrid planar and finFET CMOS devices Electricity 62 Expired
US8169025B2 Strained CMOS device, circuit and method of fabrication Electricity 57 Active
US6780694B2 MOS transistor Electricity 54 Expired
US7388259B2 Strained finFET CMOS device structures Electricity 54 Expired
US7091566B2 Dual gate FinFet Electricity 53 Expired
US8796093B1 Doping of FinFET structures Electricity 52 Active
US6939751B2 Method and manufacture of thin silicon on insulator (SOI) with recessed channel Electricity 50 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.