Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element
US7224601B2 · kind B2 · utility
222Cited by
37References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 9, 2005 |
| Grant date | May 29, 2007 |
| Priority date | — |
| Expiry date | Nov 9, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/329
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Devices and techniques for applying a resonant action by an applied oscillating magnetic field to a magnetic tunnel junction (MTJ) and an action of an applied DC current across the MTJ to effectuate a switching of the MTJ when writing data to the MTJ.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.