Thermal processing equipment calibration method
US7225095B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 29, 2005 |
| Grant date | May 29, 2007 |
| Priority date | — |
| Expiry date | Aug 29, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for calibrating thermal processing equipment used for heat treatment of a multilayer substrate, in particular a multilayer semiconductor substrate. A calibration test profile is determined by processing a calibration test substrate according to thermal process parameters that produce multilayer substrates having an even thickness profile, and/or having reduced slip lines and/or reduced wafer deformation, and/or having other desired and predetermined properties. Then a particular thermal processing equipment is calibrated by determining thermal process parameters for that equipment so that a test substrate processed with these parameters will have the determined calibration test profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.