Non-outgassing low activation energy resist
US7226718B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2005 |
| Grant date | Jun 5, 2007 |
| Priority date | — |
| Expiry date | Nov 23, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/106
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Numerous embodiments of a method to prevent outgassing from a low activation energy photoresist are described. In one embodiment of the present invention, a photoresist material is dispensed over a substrate to form a photoresist layer. The photoresist layer includes branched polymers coupled with acetal or ketal linkages. An exposed portion of the photoresist layer is exposed to a radiation treatment to cleave the acetal or ketal linkages and separate the branched polymers. The photoresist layer is baked at a temperature below about 100° C., and the separated branched polymers are too large to outgass from the photoresist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.