PMD liner nitride films and fabrication methods for improved NMOS performance
US7226834B2 · kind B2 · utility
13Cited by
16References
22Claims
0Family size
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Key dates
| Filing date | Apr 19, 2004 |
| Grant date | Jun 5, 2007 |
| Priority date | — |
| Expiry date | Aug 29, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/938
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices (102) and fabrication methods (10) are provided, in which a nitride film (130) is formed over NMOS transistors to impart a tensile stress in all or a portion of the NMOS transistor to improve carrier mobility. The nitride layer (130) is initially deposited over the transistors at low temperature with high hydrogen content to provide a moderate tensile stress in the semiconductor body prior to back-end processing. Subsequent back-end thermal processing reduces the film hydrogen content and causes an increase in the applied tensile stress.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.