Versatile system for optimizing current gain in bipolar transistor structures
US7226835B2 · kind B2 · utility
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17References
4Claims
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Key dates
| Filing date | Jul 15, 2002 |
| Grant date | Jun 5, 2007 |
| Priority date | — |
| Expiry date | Jul 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
Disclosed are apparatus and methods for designing electrical contact for a bipolar emitter structure. The area of an emitter structure (106, 306, 400, 404) and the required current density throughput of an electrical contact structure (108, 308, 402, 406) are determined. A required electrical contact area is determined based on the required current density, and the electrical contact structure is then designed to minimize the required electrical contact area with respect to the emitter structure area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.