Lily Springer
17Patents
4h-index
32Co-inventors
56Inventor score
Filing activity: Oct 25, 2001 → Nov 4, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6747308B2 | Single poly EEPROM with reduced area | Physics | 12 | Expired |
| US6716709B1 | Transistors formed with grid or island implantation masks to form reduced diffusion-depth regions without additional masks and process steps | Electricity | 11 | Expired |
| US6949424B2 | Single poly-emitter PNP using DWELL diffusion in a BiCMOS technology | Electricity | 9 | Expired |
| US7470991B2 | Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor | Electricity | 4 | Active |
| US6869851B2 | Transistors formed with grid or island implantation masks to form reduced diffusion-depth regions without additional masks and process steps | Electricity | 3 | Expired |
| US7164174B2 | Single poly-emitter PNP using dwell diffusion in a BiCMOS technology | Electricity | 3 | Expired |
| US9865584B1 | Contact array optimization for ESD devices | Electricity | 1 | Active |
| US7562315B2 | Edge recognition based high voltage pseudo layer verification methodology for mix signal design layout | Physics | 1 | Active |
| US6958269B2 | Memory device with reduced cell size | Electricity | 1 | Expired |
| US6730569B2 | Field effect transistor with improved isolation structures | Electricity | 0 | Expired |
| US6806541B2 | Field effect transistor with improved isolation structures | Electricity | 0 | Expired |
| US8273623B2 | Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor | Electricity | 0 | Active |
| US7895554B2 | Verification method with the implementation of well voltage pseudo diodes | Physics | 0 | Active |
| US8664080B2 | Vertical ESD protection device | Electricity | 0 | Active |
| US8114731B2 | Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor | Electricity | 0 | Active |
| US7226835B2 | Versatile system for optimizing current gain in bipolar transistor structures | Electricity | 0 | Expired |
| US7615805B2 | Versatile system for optimizing current gain in bipolar transistor structures | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.