Submicron contact fill using a CVD TiN barrier and high temperature PVD aluminum alloy deposition
US7226858B2 · kind B2 · utility
1Cited by
11References
24Claims
0Family size
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Key dates
| Filing date | Jan 6, 2005 |
| Grant date | Jun 5, 2007 |
| Priority date | — |
| Expiry date | Jan 15, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A submicron contact opening fill using a chemical vapor deposition (CVD) TiN liner/barrier and a high temperature, e.g., greater than about 385° C., physical vapor deposition (PVD) aluminum alloy layer that substantially fills the submicron contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.