Jacob Williams
4Patents
1h-index
7Co-inventors
37Inventor score
Filing activity: Jan 6, 2005 → Oct 15, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8937351B2 | Power MOS transistor with improved metal contact | Electricity | 2 | Active |
| US7226858B2 | Submicron contact fill using a CVD TiN barrier and high temperature PVD aluminum alloy deposition | Electricity | 1 | Expired |
| US11508500B2 | Thin film resistor (TFR) formed in an integrated circuit device using TFR cap layer(s) as an etch stop and/or hardmask | Electricity | 0 | Active |
| US11495657B2 | Thin film resistor (TFR) formed in an integrated circuit device using an oxide cap layer as a TFR etch hardmask | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.