Method of improving via filling uniformity in isolated and dense via-pattern regions
US7226873B2 · kind B2 · utility
5Cited by
4References
24Claims
0Family size
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Key dates
| Filing date | Nov 22, 2004 |
| Grant date | Jun 5, 2007 |
| Priority date | — |
| Expiry date | Aug 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An isotropic-diffusion filling method uses a thermal process on a result structure comprising a photoresist layer and an organic material layer to create a cross-linking layer there between, which minimizes step height differences between isolated and dense via-pattern regions for optimizing a subsequent trench process and simplifying process steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.