Strained-silicon CMOS device and method
US7227205B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2004 |
| Grant date | Jun 5, 2007 |
| Priority date | — |
| Expiry date | Aug 31, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/80
Abstract
The present invention provides a semiconductor device and a method of forming thereof, in which a uniaxial strain is produced in the device channel of the semiconductor device. The uniaxial strain may be in tension or in compression and is in a direction parallel to the device channel. The uniaxial strain can be produced in a biaxially strained substrate surface by strain inducing liners, strain inducing wells or a combination thereof. The uniaxial strain may be produced in a relaxed substrate by the combination of strain inducing wells and a strain inducing liner. The present invention also provides a means for increasing biaxial strain with strain inducing isolation regions. The present invention further provides CMOS devices in which the device regions of the CMOS substrate may be independently processed to provide uniaxially strained semiconducting surfaces in compression or tension.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.