Semiconductor devices having buried bit lines and methods of manufacturing semiconductor devices having buried bit lines
US7227220B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2005 |
| Grant date | Jun 5, 2007 |
| Priority date | — |
| Expiry date | Sep 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/30
Abstract
A semiconductor device includes a semiconductor substrate having a first conductivity type and having an upper portion, a pair of bit lines extending in a first direction and doped with an impurity of a second conductivity type opposite to the first conductivity type and spaced from one another in the upper portion of the semiconductor substrate, a first line formed between the pair of bit lines having a plurality of alternating recessed device isolation regions and channel regions, with each of the channel regions contacting each bit line of the at least one pair of bit lines, and word lines formed at right angles to the first lines and covering the channel regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.