Systems and methods for biasing high fill-factor sensor arrays and the like
US7227237B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2003 |
| Grant date | Jun 5, 2007 |
| Priority date | — |
| Expiry date | Jun 4, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/223
Abstract
A high fill-factor photosensor array is formed comprising a P-layer, an I-layer, one or more semiconductor structures adjacent to the I-layer and each coupled to a N-layer, an electrically conductive electrode formed on top of the P-layer, and an additional semiconductor structure, adjacent to the N-layer and which is electrically connected to a voltage bias source. The bias voltage applied to the additional semiconductor structure charges the additional semiconductor structure, thereby creating a tunneling effect between the N-layer and the P-layer, wherein electrons leave the N-layer and reach the P-layer and the electrically conductive layer. The electrons then migrate and distribute uniformly throughout the electrically conductive layer, which ensures a uniform bias voltage across to the entire photosensor array. The biasing scheme in this invention allows to achieve mass production of photosensors without the use of wire bonding.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.