Sputtering apparatus
US7229532B2 · kind B2 · utility
5Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2004 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | May 11, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/202
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A sputtering apparatus for forming a film by a physical gas-phase growth on a substrate having a irregular or flat shape is provided including three or more axes for independently varying a relative positional relationship between a substrate and a cathode in the course of film formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.