Method for evaluating photo mask and method for manufacturing semiconductor device
US7229721B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2003 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | Jun 5, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/705
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for evaluating a photo mask comprises preparing a photo mask including a unit drawing pattern, finding a dimensional variation relating to the photo mask, the dimensional variation including first and second dimensional variations, the first dimensional variation occurring due to a positional displacement and size mismatch of the unit drawing pattern in the photo mask and the second dimensional variation occurring due to etching and development relating to a manufacturing of the photo mask, estimating a deteriorated amount of an exposure latitude occurring due to the dimensional variation of the photo mask using the dimensional variation and a degree of influence of the dimensional variation for the exposure latitude, and judging quality of the photo mask by comparing the deteriorated amount of the exposure latitude and an allowable deteriorated amount of the exposure latitude.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.