Non-activated guard ring for semiconductor devices
US7229866B2 · kind B2 · utility
16Cited by
11References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2004 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | Sep 28, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A guard ring is formed in a semiconductor region that is part of a Schottky junction or Schottky diode. The guard ring is formed by ion implantation into the semiconductor contact layer without completely annealing the semiconductor contact layer to form a high resistance region. The guard ring may be located at the edge of the layer or, alternatively, at a distance away from the edge of the layer. A Schottky metal contact is formed atop the layer, and the edges of the Schottky contact are disposed atop the guard ring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.